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2SK3639 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3639 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, and designed for low voltage high current.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK) (TO-252) FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP.