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80N055 - NP80N055

General Description

These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2900 pF TYP.
  • Built-in gate protection diode.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2900 pF TYP.