80N055
Description
These products are N-channel MOS Field Effect .T.rcaonmsistor designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A)
- Low Ciss : Ciss = 2900 pF TYP
- Built-in gate protection diode
