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C5012 - 2SC5012

Key Features

  • Small Package.
  • High Gain Bandwidth Product (fT = 9 GHz TYP. ).
  • Low Noise, High Gain.
  • Low Voltage Operation.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product (fT = 9 GHz TYP.) • Low Noise, High Gain • Low Voltage Operation ORDERING INFORMATION PART NUMBER 2SC5012-T1 2SC5012-T2 QUANTITY 3 Kpcs/Reel. 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.