CE1A3Q Datasheet | NEC

FEATURES - On-chip zener diode for surge voltage absorption - On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ - Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A - On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) - IB(DC) PT Tj Tstg Ratings 60±10 60±10 15 ±2.0 ±3.0 0.03 1.0 150 - 55 to +150 Unit V V V A A A W °C °C - PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Colletor to emitter voltage Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance 1 Input resistance 2 Turn-on time Storage time Fall time Symbol VCEO(SUS) ICBO h FE1 - - h FE2 - - h FE3 - - VOL - - VIL - - R1 R2 ton tstg tf IC = 1.0 A IBI = - IB2 = 10 m A VCC = 20 V, RL = 20 Ω Conditions IC = 2.0 A, IB = 5.0 Ma, L = 6.0 m H VCB = 40 V, IE = 0 VCE = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 1.0 A VCE = 5.0 V, IC = 2.0 A VI = 5.0 V, IC = 0.5 A VCE = 12 V, IC = 100 µA 0.7 7.0 700 1000 500 1200 1700 1300 0.12 0.46 1.0 10.0 0.4 1.4 0.5 0.3 0.4 1.3 13.0 3000 MIN. 50 TYP. 60 100 MAX. Unit V n A - - - V V kΩ kΩ µs µs µs - - Pulse test PW≤350 µs, duty cycle≤2 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16177EJ1V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 TYPICAL CHARACTERISTICS (Ta = 25°C) Data Sheet D16177EJ1V0DS Data Sheet D16177EJ1V0DS - The information in this document is current as of July,...