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CE1A3Q - COMPOUND TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • On-chip zener diode for surge voltage absorption.
  • On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ.
  • Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A.
  • On-chip dumper diode for reverse cable.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET COMPOUND TRANSISTOR CE1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1A3Q is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 1.0 kΩ, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.