D70F3210YGC datasheet by NEC (now Renesas Electronics).
| Part number | D70F3210YGC |
|---|---|
| Datasheet | D70F3210YGC_NEC.pdf |
| File Size | 4.63 MB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | UPD70F3210YGC |
|
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Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate.
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