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J133-Z - P-Channel Power MOSFET

This page provides the datasheet information for the J133-Z, a member of the J133 P-Channel Power MOSFET family.

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Gate drive available at logic level (VGS =.
  • 4 V).
  • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω).
  • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC.

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Datasheet preview – J133-Z

Datasheet Details

Part number J133-Z
Manufacturer NEC
File Size 128.23 KB
Description P-Channel Power MOSFET
Datasheet download datasheet J133-Z Datasheet
Additional preview pages of the J133-Z datasheet.

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Other Datasheets by NEC
  • J133 - P-Channel Power MOSFET
  • J132 - MOS FIELD EFFECT POWER TRANSISTORS
  • J132-Z - MOS FIELD EFFECT POWER TRANSISTORS

Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
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