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J133 - P-Channel Power MOSFET

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Gate drive available at logic level (VGS =.
  • 4 V).
  • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω).
  • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC.

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📁 Similar Datasheet

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
J133-Z P-Channel Power MOSFET
J132 MOS FIELD EFFECT POWER TRANSISTORS
J132-Z MOS FIELD EFFECT POWER TRANSISTORS

Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.