J649 Overview
Description
The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
Key Features
- Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)
- Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)
- Built-in gate protection diode (Isolated TO-220)
