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K3113 - 2SK3113

General Description

The 2SK3113 is N-channel DMOS FET device that

Key Features

  • a low gate charge and excellent switching characteristic, and designed for high voltage.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.