K3115B Datasheet | Renesas

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that Features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115B-S17-AY Note Isolated TO-220 Note Pb-free (This product does not contain Pb in External electrode.) Features - Low gate charge QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) - Gate voltage rating : ±30 V - Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) - Avalanche capability...