K3296 Datasheet | NEC

.. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3296 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3296 2SK3296-S 2SK3296-ZK 2SK3296-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZK) TO-263(MP-25ZJ) Features - 4.5 V drive available - Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A) - Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) - Built-in gate protection diode -...