MC-4564EC726 Datasheet | NEC

DATA SHEET MOS INTEGRATED CIRCUIT 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features - 67,108,864 words by 72 bits organization (ECC type) - Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) MC-4564EC726EFB-A80 CL = 3 CL = 2 MC-4564EC726EFB-A10 CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 125 MHz 100 MHz 100 MHz 77 MHz Access time from CLK (MAX.) 6 ns 6 ns 6 ns 7 ns 6 ns 6 ns 6 ns 7 ns PC100 Registered DIMM Rev. 1.2 pliant Module type MC-4564EC726PFB-A80 CL = 3 CL = 2 MC-4564EC726PFB-A10 CL = 3 CL = 2 - Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge - Pulsed interface - Possible to assert random column address in every cycle - Quad internal banks controlled by BA0 and BA1 (Bank Select) - Programmable burst-length (1, 2, 4, 8 and Full Page) - Programmable wrap sequence (Sequential / Interleave) - Programmable /CAS latency (2, 3) - Automatic precharge and controlled precharge - CBR (Auto) refresh and self refresh - All DQs have 10 Ω ± 10 % of series resistor - Single 3.3 V ± 0.3 V power supply - LVTTL patible - 4,096 refresh cycles / 64 ms - Burst termination by Burst Stop mand and Precharge mand - 168-pin dual in-line memory module (Pin pitch = 1.27 mm) - Registered type - Serial...