MC-4564EC727
MC-4564EC727 is 64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE manufactured by NEC.
DATA SHEET
MOS INTEGRATED CIRCUIT
64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
Description
The MC-4564EC727 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.
Features
- 67,108,864 words by 72 bits organization (ECC type)
- Clock frequency and access time from CLK
Part number MC-4564EC727EF-A75 /CAS latency CL = 3 CL = 2 MC-4564EC727PF-A75 CL = 3 CL = 2 Clock frequency (MAX.) 133 MHz 100 MHz 133 MHz 100 MHz Access time from CLK (MAX.) 5.4 ns 6.0 ns 5.4 ns 6.0 ns Module type PC133 Registered DIMM Rev. 1.0 pliant
5 5
- Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
- Pulsed interface
- Possible to assert random column address in every cycle
- Quad internal banks controlled by BA0 and BA1 (Bank Select)
- Programmable burst-length 5 (1, 2, 4, 8 and Full Page)
- Programmable wrap sequence (Sequential / Interleave)
- Programmable /CAS latency (2, 3)
- Automatic precharge and controlled precharge
- CBR (Auto) refresh and self refresh
- All DQs have 10 Ω ± 10 % of series resistor
- Single 3.3 V ±0.3 V power supply
- LVTTL patible
- 4,096 refresh cycles/64 ms
- Burst termination by Burst Stop mand and Precharge mand
- 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
- Registered type
- Serial PD
- Stacked monolithic technology
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional...