MC-458CB641PS Datasheet | NEC

DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB641ES, 458CB641PS 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features - 8,388,608 words by 64 bits organization - Clock frequency and access time from CLK Part number MC-458CB641ES-A80 /CAS latency CL = 3 CL = 2 MC-458CB641ES-A10 CL = 3 CL = 2 Clock frequency (MAX.) 125 MHz 100 MHz 100 MHz 77 MHz 125 MHz 100 MHz 100 MHz 77 MHz Access time from CLK (MAX.) 6 ns 6 ns 6 ns 7 ns 6 ns 6 ns 6 ns 7 ns MC-458CB641PS-A80 CL = 3 CL = 2 MC-458CB641PS-A10 CL = 3 CL = 2 - Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge - Pulsed interface - Possible to assert random column address in every cycle - Quad internal banks controlled by BA0, BA1 (Bank Select) - Programmable burst-length: 1, 2, 4, 8 and Full Page - Programmable wrap sequence (Sequential / Interleave) - Programmable /CAS latency (2, 3) - Automatic precharge and controlled precharge - CBR (Auto) refresh and self refresh - Single 3.3 V ±0.3 V power supply - LVTTL patible - 4,096 refresh cycles/64 ms - Burst termination by Burst Stop mand and Precharge mand - 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) - Unbuffered type - Serial...