MC-458CB646 Datasheet | NEC

DATA SHEET MOS INTEGRATED CIRCUIT 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646EFB and MC-458CB646PFB are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 128M SDRAM: µPD45128163 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features - 8,388,608 words by 64 bits organization - Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) MC-458CB646EFB-A80 CL = 3 CL = 2 MC-458CB646EFB-A10 CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 125 MHz 100 MHz 100 MHz 77 MHz Access time from CLK (MAX.) 6 ns 6 ns 6 ns 7 ns 6 ns 6 ns 6 ns 7 ns MC-458CB646PFB-A80 CL = 3 CL = 2 MC-458CB646PFB-A10 CL = 3 CL = 2 - Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge - Pulsed interface - Possible to assert random column address in every cycle - Quad internal banks controlled by BA0 and BA1 (Bank Select) - Programmable burst-length (1, 2, 4, 8 and full page) - Programmable wrap sequence (sequential / interleave) - Programmable /CAS latency (2, 3) - Automatic precharge and controlled precharge - CBR (Auto) refresh and self refresh - All DQs have 10 Ω ± 10 % of series resistor - Single 3.3 V ± 0.3 V power supply - LVTTL patible - 4,096 refresh cycles/64 ms - Burst termination by Burst Stop mand and Precharge mand - 168-pin dual in-line memory module (Pin pitch = 1.27 mm) - Unbuffered type - Serial...