NEC NE25118
The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. This device is available in a 4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applications.| Part No. | NE25118 |
|---|---|
| Datasheet | NE25118 Download |
| Manufacturer |  NEC |
| Description | DUAL-GATE GaAS MESFET |
| Buy | Stock & Price |
FEATURES
● SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER● LOW CRSS: 0.02 pF (TYP)
● HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
● LOW NF: 1.1 dB TYP AT 900 MHz
● LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm
● ION IMPLANTATION
● AVAILABLE IN TAPE & REEL OR BULK
● LOW PACKAGE HEIGHT: 1.0 mm MAX Power Gain, GPS (dB) 20 NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 0 5 10
DESCRIPTION
As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. Drain to Source Voltage, VDS (V)ELECTRICAL CHARACTERISTICS
(TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL NF GPS BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA Saturated Drain C...
