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NE25139 - DUAL-GATE GaAS MESFET

Description

The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.

As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs.

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Datasheet preview – NE25139

Datasheet Details

Part number NE25139
Manufacturer NEC
File Size 482.76 KB
Description DUAL-GATE GaAS MESFET
Datasheet download datasheet NE25139 Datasheet
Additional preview pages of the NE25139 datasheet.

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Full PDF Text Transcription

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GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB) FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 20 10 VG2S = 1 V VG2S = 0.
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