NE25139 Datasheet | NEC

GENERAL PURPOSE DUAL-GATE Ga AS MESFET Power DISCONTINU Gain,GPSE (d B) D Noise Figure, NF (d B) Features - SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER - LOW CRSS: 0.02 p F (TYP) - HIGH GPS: 20 d B (TYP) AT 900 MHz - LOW NF: 1.1 d B TYP AT 900 MHz - LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm - ION IMPLANTATION - AVAILABLE IN TAPE & REEL OR BULK DESCRIPTION The NE251 is a dual gate Ga As FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 m A 5 f = 900 MHz 0 10 Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 25°C) SYMBOL NF BVDSX IDSS VG1S (OFF) VG2S (OFF) IG1SS IG2SS |YFS| CISS CRSS PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 m A, f = 900...