• Part: NE661M04-T2
  • Description: NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 70.64 KB
Download NE661M04-T2 Datasheet PDF
NEC
NE661M04-T2
FEATURES - Low noise and high gain with low collector current - NF = 1.2 d B, Ga = 16 d B TYP. @f = 2 GHz, VCE = 2 V, IC = 2 m A - Maximum stable power gain: MSG = 22 d B TYP. @f = 2 GHz, VCE = 2 V, IC = 5 m A - f T = 25 GHz technology - Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number NE661M04 NE661M04-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style - 8 mm wide emboss taping - 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE MAXIMUM RATINGS Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Ptot Note Ratings 15 3.3 1.5 12 39 150 - 65 to +150 Unit V V V m A m W °C °C Tj Tstg Note TA = +25°C (free air) THERMAL RESISTANCE Item Junction to Case Resistance Junction...