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NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

Key Features

  • Low noise and high gain with low collector current.
  • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA.
  • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA.
  • fT = 25 GHz technology.
  • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm).

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Datasheet Details

Part number NE661M04-T2
Manufacturer NEC (now Renesas Electronics)
File Size 70.64 KB
Description NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Datasheet download datasheet NE661M04-T2 Datasheet

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DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number NE661M04 NE661M04-T2 Quantity Loose product (50 pcs) Taping product (3 kpcs/reel) Packaging Style • 8 mm wide emboss taping • 1 pin (emitter), 2 pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).