NE661M04 Overview
DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD.
NE661M04 Key Features
- Low noise and high gain with low collector current
- NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA
- Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
- fT = 25 GHz technology
- Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
- 8 mm wide emboss taping
- 1 pin (emitter), 2 pin (collector) feed hole direction