NPN Silicon High Frequency Transistor
| Part number | NE662M16 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 63.42 KB |
| Description | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Datasheet | NE662M16_NEC.pdf |
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The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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NE662M16 | NPN SILICON RF TRANSISTOR | CEL |
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NE662M16-A | NPN SILICON RF TRANSISTOR | CEL |
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NE662M16-T3-A | NPN SILICON RF TRANSISTOR | CEL |
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE662M16-T3 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE661M04 | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| NE661M04-T2 | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
