NE662M16
NE662M16 is NPN SILICON RF TRANSISTOR manufactured by CEL.
DISCONTINUED
NPN SILICON RF TRANSISTOR
NE662M16 / 2SC5704
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD
Features
- Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
NF = 1.1 d B TYP. @ VCE = 2 V, IC = 5 m A, f = 2 GHz
- High f T: f T = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 m A, f = 2 GHz
- 6-pin lead-less minimold package
ORDERING INFORMATION
Part Number NE662M16-A 2SC5704-A NE662M16-T3-A 2SC5704-T3-A
Quantity 50 pcs (Non reel)
10 kpcs/reel
Supplying Form
- 8 mm wide embossed taping
- Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50...
