NE662M16 Description
DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD.
NE662M16 Key Features
- Ideal for low noise high-gain amplification and oscillation at 3 GHz or over
- High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
- 6-pin lead-less minimold package
- 8 mm wide embossed taping
- Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape