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NE662M16 Datasheet

NPN Silicon Rf Transistor

Manufacturer: CEL

Datasheet Details

Part number NE662M16
Manufacturer CEL
File Size 700.05 KB
Description NPN SILICON RF TRANSISTOR
Datasheet NE662M16-CEL.pdf

NE662M16 Overview

DISCONTINUED NPN SILICON RF TRANSISTOR NE662M16 / 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE  HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD.

NE662M16 Key Features

  • Ideal for low noise  high-gain amplification and oscillation at 3 GHz or over
  • High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz
  • 6-pin lead-less minimold package
  • 8 mm wide embossed taping
  • Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape

NE662M16 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
NEC Logo NE662M16 NPN SILICON HIGH FREQUENCY TRANSISTOR NEC
NEC Logo NE662M16-T3 NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

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