Datasheet4U Logo Datasheet4U.com

NE67300 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY

Description

The NE673

Features

  • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND.

📥 Download Datasheet

Datasheet preview – NE67300

Datasheet Details

Part number NE67300
Manufacturer NEC
File Size 109.51 KB
Description (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
Datasheet download datasheet NE67300 Datasheet
Additional preview pages of the NE67300 datasheet.

📁 Similar Datasheet

  • NE67400 - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET (CEL)
  • NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET (CEL)
  • NE677M04 - NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
  • NE678M04 - NPN SILICON RF TRANSISTOR (CEL)
  • NE600 - 1GHz LNA and mixer (NXP Semiconductors)
  • NE602 - NE602 (ETC)
  • NE602 - Double-Balanced Mixer and Oscillator (Philips)
  • NE602A - Double-Balanced Mixer and Oscillator (Philips)
  • NE604A - High Performance Low Power FM IF System (Philips)
  • NE605 - HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM (NXP)
Other Datasheets by NEC
  • NE67383 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
  • NE678M04 - MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
  • NE6500379 - 3W L / S-BAND POWER GaAs MESFET
  • NE6500379A - 3W L / S-BAND POWER GaAs MESFET
  • NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE6501077 - 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE650R279A - 0.2 W L / S-BAND POWER GaAs MES FET
  • NE650R479A - 0.4 W L / S-BAND POWER GaAs MES FET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 5 GA 4 16 20 3 12 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER (Triple Epitaxial Technology) • PROVEN RELIABILITY AND STABILITY • SPACE QUALIFIED 2 8 1 NFOPT 4 0 0 1 2 4 8 12 20 30 DESCRIPTION The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's gate and channel are glassivated with a thin layer of Si3N4 for mechanical protection only.
Published: |