NE67383
FEATURES
- VERY HIGH f MAX: 100 GHz
Optimum Noise Figure, NFOPT (d B)
NE67300 NE67383
NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 m A
5 GA 4 16 20
- LG = 0.3 µm, WG = 280 µm
- N+ CONTACT LAYER (Triple Epitaxial Technology)
- PROVEN RELIABILITY AND STABILITY
- SPACE QUALIFIED
NFOPT
0 1 2 4 8 12 20 30
DESCRIPTION
The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology for industrial and space applications. The device is available as a chip (NE67300). The chip's gate and channel are glassivated with a thin layer of Si3N4 for mechanical protection only. The NE673 is in a rugged hermetically sealed metal/ceramic stripline package selected for NFOPT performance at 12.0 GHz. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
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