NE67383 Overview
The.
NE67383 Key Features
- VERY HIGH fMAX: 100 GHz
- LG = 0.3 µm, WG = 280 µm
- N+ CONTACT LAYER (Triple Epitaxial Technology)
- PROVEN RELIABILITY AND STABILITY
- SPACE QUALIFIED
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | NE67383 |
|---|---|
| Datasheet | NE67383 NE67300 Datasheet (PDF) |
| File Size | 109.51 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
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See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE67300 | (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
| NE678M04 | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510179A | 1 W L-BAND POWER GaAs HJ-FET |