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NE688M23 - NPN SILICON TRANSISTOR

Description

The NE688M23 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Features

  • NEW.

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Datasheet preview – NE688M23

Datasheet Details

Part number NE688M23
Manufacturer NEC
File Size 48.18 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE688M23 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 FEATURES • NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 0.5 • • • 1 0.25 1.0 0.4 2 3 0.25 DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.
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