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NE688M23 - NPN SILICON TRANSISTOR

General Description

The NE688M23 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Key Features

  • NEW.

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Full PDF Text Transcription for NE688M23 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE688M23. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 FEATURES • NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads a...

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M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height – Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 0.5 • • • 1 0.25 1.0 0.4 2 3 0.25 DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

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