NE688M23 Datasheet | NEC

.. PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 Features - NEW MINIATURE M23 PACKAGE: - World's smallest transistor package footprint - leads are pletely underneath package body - Low profile/0.55 mm package height - Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: f T = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 d B at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 m A OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 - - - 1 DESCRIPTION The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. BOTTOM VIEW PIN CONNECTIONS 1. Collector 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NF |S21E|2 h FE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 m A, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 m A, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 m A, f = 2 GHz Forward Current Gain at VCE = 1 V, IC = 3 m A Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz µA µA p F 0.7 UNITS GHz d B d B 3 80 MIN 4 NE688M23 2SC5651 M23 TYP 5 1.9 4 145 0.1 0.1 0.8 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern...