NE85001 Description
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for mercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation.
NE85001 Key Features
- Class A operation
- High power output
- High reliability
- WB, RG indicate a type of containers for chips. WB: black carrier, RG: ring,: gel-pack
- Specified at the condition at the last page