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NE85001 - 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

General Description

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.

NE8500100 is the two-cells recessed gate chip used in ‘99’ package.

The device incorporates Ti-Al gate and silicon dioxide glassivation.

Key Features

  • Class A operation.
  • High power output.
  • High reliability.

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Full PDF Text Transcription for NE85001 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE85001. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz freque...

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DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.

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