Full PDF Text Transcription for NE85002 (Reference)
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NE85002. For precise diagrams, and layout, please refer to the original PDF.
PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequen...
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DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
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NE85002 Datasheet
