| Part number | NE85002 |
|---|---|
| Datasheet | NE85002_NEC.pdf |
| File Size | 48.93 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
|
|
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-6 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-8 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE85001 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500100 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE850R599A | C-BAND MEDIUM POWER GaAs MESFET |
| NE856 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE85600 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
