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NEZ7785-8D Datasheet 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Manufacturer: NEC (now Renesas Electronics)

General Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.

Overview

PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES.

Key Features

  • Internally matched to 50 Ω.
  • High power output.
  • High linear gain.
  • High reliability.
  • Low distortion Document No. P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series.