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NEZ7785-8DD - 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

Features

  • Internally matched to 50 Ω.
  • High power output.
  • High linear gain.
  • High reliability.
  • Low distortion Document No. P10981EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 4W/8W C-BAND POWER-GaAs FET NEZ Series.

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Datasheet Details

Part number NEZ7785-8DD
Manufacturer NEC
File Size 108.80 KB
Description 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet download datasheet NEZ7785-8DD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance. PACKAGE DIMENSIONS (unit: mm) 0.5±0.1 2.5MIN. C1.5 4PLACES SOURCE R1.6 2PLACES GATE 2.4 12.9±0.2 3.2 6.45±0.05 DRAIN 17.0±0.2 21.0±0.3 10.7 2.5MIN.
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