NP15P06SLG Overview
Description
The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance <R> RDS(on)1 = 70 mΩ MAX. (VGS = -10 V, ID = -7.5 A) <R> RDS(on)2 = 95 mΩ MAX. (VGS = -4.5 V, ID = -7.5 A)
- Low input capacitance Ciss = 1100 pF TYP
- Built-in gate protection diode (TO-252)
