| Part Number | NP15P06SLG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP15P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP15P06SLG-E1-AY Note NP15P06SLG-E2-AY Note
LEAD PLATING P.
* Super low on-state resistance *10 V, ID = *7.5 A) *4.5 V, ID = *7.5 A) * Low input capacitance Ciss = 1100 pF TYP. * Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V). |
NP15P06SLG Datasheet and Specifications PDF
The NP15P06SLG is a P-Channel MOSFET.
Key Specifications
| Package | TO-252 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.4 mm |
| Length | 6 mm |
| Width | 6 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP15P06SLG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 70 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS.
* Super low on-state resistance : RDS(on) = 70 m Max. ( VGS = -10 V, ID = -7.5 A ) RDS(on) = 95 m Max. ( VGS = -4.5 V, ID = -7.5 A ) * Low input capacitance : Ciss = 1100 pF Typ. * Built-in gate protection diode * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product . |