NP80N03KDE
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R>
ORDERING INFORMATION
PART NUMBER NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE-E1-AY NP80N03KDE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N03CDE-S12-AZ NP80N03DDE-S12-AY NP80N03MDE-S18-AY NP80N03NDE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
FEATURES
- Channel Temperature 175 degree rated
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- Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A)
- Low input...
