• Part: NP80N03MLE
  • Description: SWITCHING N-CHANNEL POWER MOSFET
  • Category: MOSFET
  • Manufacturer: NEC
  • Size: 253.82 KB
Download NP80N03MLE Datasheet PDF
NEC
NP80N03MLE
NP80N03MLE is SWITCHING N-CHANNEL POWER MOSFET manufactured by NEC.
- Part of the NP80N03NLE comparator family.
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N03ELE, NP80N03KLE NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE SWITCHING N-CHANNEL POWER MOS FET .. DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE-E1-AY NP80N03KLE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP80N03CLE-S12-AZ NP80N03DLE-S12-AY NP80N03MLE-S18-AY NP80N03NLE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) Features - Channel Temperature 175 degree rated - Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) - Low input capacitance Ciss = 2600 p F TYP. - Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional...