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DATA SHEET
MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES • Logic level • Super low on-state resistance
- NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.