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NP80N055NLE Datasheet N-channel Power Mos Fet

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE, NP80N055KLE NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE SWITCHING N-CHANNEL POWER MOS.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1.

Pb-free (This product does not contain Pb in the external electrode.) 2.

Key Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A).
  • Low input capacitance Ciss = 2900 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all product.

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