NP80N055NLE Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055ELE, NP80N055KLE NP80N055CLE, NP80N055DLE, NP80N055MLE, NP80N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220) Features - Channel temperature 175 degree rated - Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) - Low input capacitance Ciss = 2900 p F TYP. - Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14097EJ6V0DS00 (6th edition) Date Published October 2007 NS 2002, 2007 Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. NP80N055ELE, NP80N055KLE, NP80N055CLE, NP80N055DLE, NP80N055MLE,...