NEC NP80N055MLE
This product does not contain Pb in the external electrode.) 2.| Part No. | NP80N055MLE |
|---|---|
| Datasheet | NP80N055MLE Download |
| Manufacturer |  NEC |
| Description | N-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP80N055ELE-E1-AY Note1, 2 NP80N055ELE-E2-AY Note1, 2 NP80N055KLE-E1-AY Note1 NP80N055KLE-E2-AY Note1 NP80N055CLE-S12-AZ Note1, 2 NP80N055DLE-S12-AY Note1, 2 NP80N055MLE-S18-AY Note1 NP80N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free ( Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g (TO-220)FEATURES
● Channel temperature 175 degree rated● Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
● Low input capacitance Ciss = 2900 pF TYP.
● Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice.
