Part NP80N055MLE
Description N-CHANNEL POWER MOS FET
Manufacturer NEC
Size 245.31 KB
NEC
NP80N055MLE

Overview

  • Channel temperature 175 degree rated
  • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A)
  • Low input capacitance Ciss = 2900 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14097EJ6V0DS00 (6th edition) Date Published October 2007 NS