NP80N055NHE Overview
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Key Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2400 pF TYP
