NP80N055NHE
NP80N055NHE is Switching N-Channel Power MOSFET manufactured by NEC.
- Part of the NP80N055CHE comparator family.
- Part of the NP80N055CHE comparator family.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
SWITCHING N-CHANNEL POWER MOS FET
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DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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ORDERING INFORMATION
PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N055CHE-S12-AZ NP80N055DHE-S12-AY NP80N055MHE-S18-AY NP80N055NHE-S18-AY
Sn-Ag-Cu Tube 50 p/tube
TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
Pure Sn (Tin)
Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design
(TO-220)
Features
- Channel temperature 175 degree rated
- Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
- Low input capacitance Ciss = 2400 p F TYP.
- Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
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