NEC NP82N06PLG
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | NP82N06PLG |
|---|---|
| Datasheet | NP82N06PLG Download |
| Manufacturer |  NEC |
| Description | SWITCHING N-CHANNEL POWER MOS FET |
| Buy | Stock & Price |
DESCRIPTION
ORDERING INFORMATION PART NUMBER NP82N06PLG-E1-AY NP82N06PLG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in the external electrode.)FEATURES
● Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)● Low input capacitance Ciss = 5700 pF TYP.
● Built-in gate protection diode (TO-263)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±82 ±270 143 1.8 175 −55 to +175 37 137 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Note2 Note2 IAR EAR Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG =...
