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NP82N06PLG - SWITCHING N-CHANNEL POWER MOS FET

Description

The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A).
  • Low input capacitance Ciss = 5700 pF TYP.
  • Built-in gate protection diode (TO-263).

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Datasheet Details

Part number NP82N06PLG
Manufacturer NEC
File Size 223.01 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet NP82N06PLG Datasheet
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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP82N06PLG-E1-AY NP82N06PLG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) • Low input capacitance Ciss = 5700 pF TYP.
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