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NX5315 - LASER DIODE

General Description

The NX5315 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.

These devices are designed for application up to 1.25 Gb/s.

FTTH PON (B-PON, G-PON, GE-PON 10 km) system

Key Features

  • Optical output power.
  • Low threshold current.
  • Differential Efficiency.
  • InGaAs monitor PIN-PD.
  • CAN package.
  • Focal point Po = 13.0 mW lth = 6 mA ηd = 0.5 W/A.
  • Wide operating temperature range TC =.
  • 40 to +85°C φ 5.6 mm 6.35 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Ple.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power • Low threshold current • Differential Efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 13.0 mW lth = 6 mA ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C φ 5.6 mm 6.35 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.