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PS2561L1-1 - HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

General Description

The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount.

Key Features

  • High isolation voltage BV = 5 000 Vr. m. s. : standard products BV = 3 750 Vr. m. s. : VDE0884 approved products (Option).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 200 % TYP. ).
  • High-speed switching (t r = 3 µs TYP. , tf = 5 µs TYP. ).
  • UL approved (File No. E72422 (S) ).
  • CSA approved (No. CA 101391).
  • BSI approved (BS415, BS7002) No. 7112.
  • SEMKO approved (SS4410165) No. 9317144.
  • NEM.

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📁 Similar Datasheet

Part Number Description Manufacturer
PS2561L1-1 PHOTOCOUPLER CEL
PS2561L1-1 GaAs light emitting diode and an NPN silicon phototransistor Renesas
PS2561L-1 Photocoupler Kexin
PS2561L-1 PHOTOCOUPLER CEL
PS2561L-1 GaAs light emitting diode and an NPN silicon phototransistor Renesas

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
PS2561L-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
PS2561L-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
PS2561-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
PS2561-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET PHOTOCOUPLER PS2561-1,-2, PS2561L-1,-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 200 % TYP.) • High-speed switching (t r = 3 µs TYP., tf = 5 µs TYP.) • UL approved (File No. E72422 (S) ) • CSA approved (No. CA 101391) • BSI approved (BS415, BS7002) No.