PS2561L1-1
PS2561L1-1 is GaAs light emitting diode and an NPN silicon phototransistor manufactured by Renesas.
- Part of the PS2561-1 comparator family.
- Part of the PS2561-1 comparator family.
PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1
HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE
Data Sheet
R08DS0207EJ0100 Rev.1.00
Dec 25, 2020
DESCRIPTION
The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The PS2561L1-1 is wide lead bending type. The PS2561L2-1 is wide lead bending type for surface mount.
Features
- High isolation voltage (BV = 5 000 Vr.m.s.)
- High collector to emitter voltage (VCEO = 80 V)
- High current transfer ratio (CTR = 200% TYP.)
- High-speed switching (tr = 3 s TYP., tf...
