NEC UPA101G
This SiIicon MMIC transistor array contains six (6), 9 GHz bipolar transistors.FEATURES
● BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors)● OUTSTANDING hFE LINEARITY
● SMALL PACKAGE
● TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
APPLICATIONS
include a multiplier, double balanced mixer, phase detector, or AGC circuit. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. CONNECTION DIAGRAM (Top View) UPA101G 8 76 5 Q1 Q2 Q5 Q3 Q4 Q6 1 23 4ELECTRICAL CHARACTERISTICS
(TA = 25°C) SYMBOLS ICBO IEBO hFE hFE1/hFE2 CEB fT1 RRTH PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Collector Cut-off Current at VCB = 5 V, IE = 0 (All transistors) Emitter Cut-off Current at VEB = 1 V, IC = 0 (Q5 and Q6) Direct Current Amplification, VCE = 3 V, IC = 1 mA (Q5 and Q6) Direct Current Amplification Ratio, VCE = 3 V, IC = 1 mA, (Q5 and Q6) Emitter to Base Capacitance at VEB = 0, f = 1