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UPA101 - HIGH FREQUENCY NPN TRANSISTOR ARRAY

General Description

AND APPLICATIONS This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz.

double balanced mixer, phase detector, or AGC circuit.

The two package options offer a choice of excellent heat dissipation or 35 % size reduction.

Key Features

  • BUILT-IN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (Each Transistor has fT 9 GHz) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package µPA101G: Reduced circuit size due to 8-pin plastic SOP package for surface mounting DESCRIPTION AND APPLICATIONS This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications include a multiplier, double balanced mixer, phase detector, or AGC circuit. The two package options offer a choice of excellent heat dissipation or 35 % size reduction.