UPA1428A Datasheet | NEC

DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES 10 MIN. 2.54 1.4 0.6 ±0.2 1.4 0.5 ±0.2 1 2 3 4 5 6 7 8 910 ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard µPA1428AH Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. 2 3 - Surge Absorber built in. - Easy mount by 0.1 inch of terminal interval. - High h FE for Darlington Transistor. CONNECTION DIAGRAM 5 4 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Emitter to Base Voltage Surge Sustaining Energy Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature - - 4 Circuits, Ta = 25 ˚C - - - 4 Cuircuits, Tc = 25 ˚C VCBO VEBO ECEO(sus) IC(DC) IC(pulse)- IB(DC) PT1- - PT2- - - Tj 60 ± 10 60 ± 10 8 30 ±2 ±3 0.2 3.5 28 150 V V V m J/unit A/unit A/unit A/unit W W ˚C (E) (B) R1 R2 (C) 1 Collector to Emitter Voltage VCEO Tstg - 55 to +150 ˚C PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 10 kΩ R1 = .. 900 Ω R2 = - PW ≤ 350 µs, Duty Cycle ≤ 2 % The information in this document is subject to change without notice. Document No. IC-3479 (O.D. No. IC-8359) Date Published September 1994 P Printed in Japan © µPA1428A ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current Collector to Emitter Sustaining Voltage DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO VCEO(sus) 50 60 MIN. TYP. MAX. 1 5 70 UNIT TEST CONDITIONS VCB = 40 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 A, L...