UPA1436A
UPA1436A is NPN SILICON POWER TRANSISTOR ARRAY manufactured by NEC.
DESCRIPTION
The µPA1436A is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
26.8 MAX. 4.0
PACKAGE DIMENSION (in millimeters)
FEATURES
- -
- -
Easy mount by 0.1 inch of terminal interval. High h FE for Darlington Transistor. High Speed Switching. C-E Reverce Diode built in.
ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard
0.6 ±0.2
1.4 0.5 ±0.2
µPA1436AH
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications.
2 1 4 6 8 10 3 5 7 9
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation (Ta = 25 ˚C) Total Power Dissipation (Tc = 25 ˚C) Junction Temperature Storage Temperature
- - 4 Circuits Tj Tstg 150
- 55 to +150 ˚C ˚C PT2-
- 28 W VCBO VEBO IC(DC) IC(pulse)- IB(DC) PT1-
- 150 100 8 ±3 ±5 0.3 3.5 V V V A/unit A/unit A/unit W
(B)
Collector to Emitter Voltage VCEO
(C)
R1
R2 (E)
PIN NO.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. 5 kΩ R1 = .. 1.3 kΩ R2 =
- PW ≤ 350 µs, Duty Cycle ≤ 2 %
The information in this document is subject to change without notice.
Document No. IC-3482 (O.D. No. IC-8705) Date Published September 1994 P Printed in Japan
©
10 MIN.
µPA1436A...
