UPA1454 Datasheet | NEC

DESCRIPTION The µPA1454 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES 10 MIN. 1.4 0.6 ±0.1 2.54 1.4 0.5 ±0.1 1 2 3 4 5 6 7 8 9 10 - Easy mount by 0.1 inch of terminal interval. - High h FE. Low VCE(sat). h FE = 800 to 3200 (at IC = 1 A) VCE(sat) = 1.0 V MAX. (at IC = 3 A) 10 2.5 ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard µPA1454H CONNECTION DIAGRAM Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its remended applications. 3 2 1 PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) 1, 10 : Emitter (E) 4 5 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse)- IB(DC) PT1- - PT2- - - Tj 100 100 7 5 10 1.0 3.5 28 150 V V V A/unit A/unit A/unit W W ˚C Tstg - 55 to +150 ˚C - PW ≤ 300 µs, Duty Cycle ≤ 10 % - - 4 Circuits, Ta = 25 ˚C - - - 4 Circuits, Tc = 25 ˚C The information in this document is subject to change without notice. Document No. IC-3520 Date Published September 1994 P Printed in Japan © µPA1454 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO h FE1 h FE2 MIN. TYP. MAX. 10 10 UNIT TEST CONDITIONS VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 3 A IC = 3 A, IB = 30 m A IC = 3 A, IB = 30 m A IC = 3 A IB1 = - IB2 = 30 m A . 16.7 Ω . 50 V, R L = VCC = . . See test circuit µA µA - - - -...