Full PDF Text Transcription for UPA1716 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
UPA1716. For precise diagrams, tables, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1716 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designe...
View more extracted text
CRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A) • Low Ciss : Ciss = 2100 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain 1 4 5.37 Max. +0.10 –0.05 6.0 ±0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05
UPA1716 Datasheet
