UPA1717
DESCRIPTION
The µPA1717 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters.
FEATURES
- Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS =
- 10 V, ID =
- 3 A)
RDS(on)2 = 59 mΩ MAX. (VGS =
- 4.5 V, ID =
- 3 A)
1.8 MAX.
1 5.37 MAX.
6.0 ±0.3 4.4
+0.10
- 0.05
- Low Ciss : Ciss = 830 p F TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
µPA1717G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
- 30
# 25 #6 # 24
V V A A W °C °C
Gate Protection Diode Source...
