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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1790
SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8 5 N-Channel 1 ; Source 1 2 ; Gate 1 7,8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5,6 ; Drain 2
DESCRIPTION
This product is N-and P-Channel MOS Field Effect Transistor designed for motor driver applications.
FEATURES
• Dual chip type • Low on-resistance N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A)
1.44 1.8 MAX.
1 5.37 MAX.
+0.10 –0.05
P-Channel
4
6.0 ±0.3 4.4 0.8
RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A) P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS = –10 V, ID = –0.35 A) RDS(on)2 = 0.74 Ω TYP. (VGS = –4 V, ID = –0.35 A) • Low input capacitance N-Channel Ciss = 180 pF TYP. P-Channel Ciss = 230 pF TYP.