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UPA1803 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This product is a switching device which can be driven directly by a 4.5-V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1801 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1802 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
UPA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1803 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is a switching device which can be driven directly by a 4.5-V power source. The µPA1803 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES • Can be driven by a 4.5-V power source • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.