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UPA1804 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

This product is a switching device which can be driven directly by a 4.5 V power source.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Datasheet preview – UPA1804

Datasheet Details

Part number UPA1804
Manufacturer NEC
File Size 63.67 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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Additional preview pages of the UPA1804 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is a switching device which can be driven directly by a 4.5 V power source. The µPA1804 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES • Can be driven by a 4.5 V power source • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 32 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Built-in G-S protection diode against ESD 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.
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